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savantic semiconductor product specification silicon npn power transistors 2SD1933 d escription with to-220fa package darlington complement to type 2sb1342 high dc current gain applications low frequency power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector -emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak 6 a t c =25 30 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1933 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =50a; i e =0 80 v v (br)ceo collector-emitter breakdown voltage i c =1ma;i b =0 80 v v cesat collector-emitter saturation voltage i c =2a ;i b =4ma 1.5 v i cbo collector cut-off current v cb =80v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe dc current gain i c =2a ; v ce =3v 1000 10000 f t transition frequency i e =-0.2a ; v ce =5v;f=10mhz 40 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 35 pf
savantic semiconductor product specification 3 silicon npn power transistors 2SD1933 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)

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